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Sales Hotline:400-105-3560

After-sales service: 022-83712229 (for physics teaching)

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Tianjin, China

Contact Address:2nd Floor, EF Unit, Building G, Xinmao Technology Park, Huayuan Industrial Park, Tianjin

Name: WGL-2 Experimental Setup for the Principles of Semiconductor-Pumped Lasers
Date:2017-07-22

WGL-2 Experimental Setup for the Principles of Semiconductor-Pumped Lasers

面料:
Category:
Type: Optoelectronics and Lasers
Model:

- 基本配置及参数



编号

名称

参数

1

光学实验导轨

长1m,带标尺;燕尾设计,铝合金材质

2

半导体激光器

中心波长808nm,输出功率500mW,偏振态:TE

3

氦氖激光器

632.8nm,功率1mW

4

Nd:YVO4晶体

掺Nd3+浓度0.1~3.0 atm%,平面度<λ/10@632.8nm

镀膜:AR@1064nm,R<0.1%,ht@808nm,t>90%

5

KTP晶体

透过波段:0.35~4.5μm,电光系数: γ33=36Pm/V

6

光学元件

输出镜,滤光片

7

光功率指示仪

3位半数字显示。量程:含200μW、2mW、20mW、200mW、2W可调挡,测量精度0.1W。含探头,探测器有效面积:Φ10mm;光谱响应范围:250nm~2500nm(响应均匀性优于3%);

8

其他

光源架,四维调节架,二维调节架,光靶


  • Product Overview
  • Product Applications
  • Typical User

- Instrument Introduction


This experiment is designed for nonlinear optics experiments in university modern physics courses. It uses an 808 nm semiconductor-pumped Nd:YVO₄ laser as the subject of study, allowing students to hands-on adjust the laser’s optical path. By inserting a KTP crystal into the resonator cavity to generate 532 nm second-harmonic light, students observe the second-harmonic generation phenomenon and measure fundamental parameters such as the phase-matching angle and threshold. This provides them with a basic understanding of laser principles and laser technology.


- Instrument Features


Available Experiments:


1. Measurement of the operating principles and optoelectronic characteristics of semiconductor lasers


2. Operating principles, installation, and debugging of semiconductor-pumped solid-state lasers


3. Basic principles of solid-state laser frequency doubling; experiment on selecting the laser frequency-doubling matching angle












- 基本配置及参数



编号

名称

参数

1

光学实验导轨

长1m,带标尺;燕尾设计,铝合金材质

2

半导体激光器

中心波长808nm,输出功率500mW,偏振态:TE

3

氦氖激光器

632.8nm,功率1mW

4

Nd:YVO4晶体

掺Nd3+浓度0.1~3.0 atm%,平面度<λ/10@632.8nm

镀膜:AR@1064nm,R<0.1%,ht@808nm,t>90%

5

KTP晶体

透过波段:0.35~4.5μm,电光系数: γ33=36Pm/V

6

光学元件

输出镜,滤光片

7

光功率指示仪

3位半数字显示。量程:含200μW、2mW、20mW、200mW、2W可调挡,测量精度0.1W。含探头,探测器有效面积:Φ10mm;光谱响应范围:250nm~2500nm(响应均匀性优于3%);

8

其他

光源架,四维调节架,二维调节架,光靶


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